非晶形半导体物理学PHYSICS OF AMORPHOUS SEMICONDUCTORS

出版社:中国矿大出版社
出版日期:1999-12
ISBN:9789810213817
作者:Morigaki, Kazuo
页数:432页

作者简介

Presenting the fundamentals of amorphous semiconductors, this text should be useful for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors, such as a-SI:H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices. A large portion of the book is devoted to the latest developments of amorphous semiconductors, including new preparation methods for high quality a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light induced defect creation in a-Si:H and chalcogenides, and quantum phenomena in multilayer films.

书籍目录

PrefaceAcknowledgement1 Introduction2 Disorder and glass transition  2.1 Definition of disorder  2.2 Glass transition  2.3 Glass formation3 Preparation  3.1 Rapid quenching from the liquid phase  3.2 Rapid condensation from the gas phase    3.2.1 Physical vapour deposition    3.2.2 Chemical vapour deposition4 Structure  4.1 Diffraction pattern  4.2 Models for the amorphous structure    4.2.1  Tetrahedrally bonded semiconductors: a-Si and a-Ge    4.2.2  Chalcogenide glasses  4.3 Medium-range order of small-angle X-ray scattering  4.4 Computer simulation    4.4.1  Monte Carlo method    4.4.2 Molecular-dynamics method5 Electronic states  5.1 Nature of conduction and valence bands and tail states  5.2 Anderson localization6 Gap states and defects  6.1 Gap states  6.2 Measurements of defects  6.3 Dangling bonds in a-Si and a-Si:H  6.4 Defects in chalcogenide glasses7 Transport  7.1 Electrical conduction near the mobility edge  7.2 The scaling theory of Anderson localization  7.3 Conductivity taking into account multiple scatter-ing - deviation of conductivity from the Boltzmann conductivity  7.4 Transition from localization to delocalization and conductivity  7.5 Band conduction  7.6 Hopping conduction    7.6.1 Nearest-neighbor hopping    7.6.2 Variable-range hopping  7.7 AC conduction  7.8 Hall effect  7.9 Thermoelectric power  7.10 Relationship between the electrical conductivity and the thermoelectric power  7.11 Electron-phonon interaction and electrical conduction 1  7.12 Dispersive transport8 Optical properties  8.1 Optical absorption    8.1.1  Band to band transition and absorption edge    8.1.2  High energy absorption    8.1.3  Tail absorption9 Recombination10 Electron-phonon interaction and self-trapping of carriers11 Light-induced phenomena12 Thermal equilibrium processes and defect formation mechanisma13 Artificial materials14 Summary of specific materialsReferencesIndex


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